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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMG05N60D/D Designer'sTM Data Sheet Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. Built-In Free Wheeling Diode Built-In Gate Protection Zener Diode Industry Standard Package (SOT223) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125C and dV/dt = 1000 V/ms * Robust High Voltage Termination * Robust Turn-Off SOA C MMG05N60D POWERLUX IGBT 0.5 A @ 25C 600 V * * * * 4 1 2 3 G 1=G 2=4=C 3=E E CASE 318E-04 TO-261A MAXIMUM RATINGS (TC = 25C unless otherwise noted) Parameters Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Symbol VCES VCGR VCGR IC25 IC90 ICM PD TJ, Tstg RJC RJA TL Value 600 600 15 0.5 0.3 2.0 1.0 - 55 to 150 30 150 260 Unit Vdc Vdc Vdc Adc Watt C C/W UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TC 150C) Single Pulse Drain-to-Source Avalanche Energy - Starting @ TC = 25C Energy - Starting @ TC = 125C VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W (1) Pulse width is limited by maximum junction temperature repetitive rating. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. EAS 125 40 mJ Designer's is a trademark of Motorola, Inc. (c) Motorola Power Motorola, Inc. 1997 Products Division Technical Data 1 MMG05N60D ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc, TC = 25C) (VCE = 600 Vdc, VGE = 0 Vdc, TC = 125C) Gate-Body Leakage Current (VGE = 15 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 0.3 Adc, TC = 25C) (VGE = 15 Vdc, IC = 0.3 Adc, TC = 125C) Gate Threshold Voltage (VCE = VGE, IC = 250 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 0.3 Adc, TC = 25C) (IEC = 0.3 Adc, TC = 125C) (IEC = 0.1 Adc, TC = 25C) (IEC = 0.1 Adc, TC = 125C) Reverse Recovery Time @ TC = 25C IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms Reverse Recovery Stored Charge IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms SWITCHING CHARACTERISTICS (1) Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-Off Delay Time Fall Time Turn-Off Switching Loss Gate Charge (VCC = 300 Vdc, IC = 0.4 Adc, VGE = 15 Vd L = 3 0 mH, RG = 25 Vdc, 3.0 H , TC = 25 C, dV/dt = 1000 V/ms) 25C, Energy losses include "tail" (VCC = 300 Vdc, IC = 0.4 Adc, VGE = 15 Vd L = 3 0 mH, RG = 25 Vdc, 3.0 H , TC = 125C, dV/dt = 1000 V/ms) 125 C, Energy losses include "tail" (VCC = 300 Vdc, IC = 0.3 Adc, VGE = 15 Vdc) td(off) tf Eoff td(off) tf Eoff QT -- -- -- -- -- -- -- 28 150 3.25 21 280 8.0 6.4 -- -- 4.25 -- -- 10 -- ns VFEC -- -- -- -- trr -- QRR -- 35 -- 150 -- 5.0 5.2 2.3 2.3 6.0 -- 3.0 -- ns Vdc (VCE = 20 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres -- -- -- 75 11 1.6 100 20 5.0 pF VCE(on) -- -- VGE(th) 3.5 -- gfe 0.3 -- 6.0 0.42 6.0 -- -- 1.6 1.5 2.0 -- Vdc mV/C Mhos Vdc BVCES 600 -- ICES ICES IGES -- -- -- 680 0.7 0.1 5.0 10 -- -- 5.0 50 100 Vdc V/C Adc Symbol Min Typ Max Unit mAdc mC mJ ns mJ nC (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2 Motorola Power Products Division Technical Data MMG05N60D 2.5 IC , COLLECTOR-EMITTER CURRENT (A) TC = 25C 2.0 VGE = 15 V IC , COLLECTOR-EMITTER CURRENT (A) 12.5 V 10 V 2.5 TC = 150C 2.0 VGE = 15 V 12.5 V 10 V 1.5 8.0 V 1.0 1.5 8.0 V 1.0 0.5 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 0.5 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Saturation Characteristics Figure 2. Saturation Characteristics IC , COLLECTOR-EMITTER CURRENT (A) TC = -20C 2.0 VGE = 15 V 12.5 V 10 V VCE , COLLECTOR-TO-EMITTER VOLTAGE (V) 2.5 2.0 IC = 700 m 1.9 1.8 1.7 1.6 1.5 VG = 15 V 1.4 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) IC = 500 mA IC = 300 mA 1.5 8.0 V 1.0 0.5 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3. Saturation Characteristics Figure 4. Collector-To-Emitter Saturation Voltage versus Case Temperature V FEC , EMITTER-TO-COLLECTOR VOLTAGE (V) TC = 150C -20C 17 25C 12 V FEC , COLLECTOR-TO-EMITTER VOLTAGE (V) 22 10 IC = 500 m 8.0 IC = 300 mA 6.0 4.0 IC = 100 mA 2.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 7.0 2.0 0 0.5 1.0 1.5 2.0 IF, COLLECTOR CURRENT (AMPS) Figure 5. Diode Forward Voltage Figure 6. Diode Forward Voltage versus Case Temperature Motorola Power Products Division Technical Data 3 MMG05N60D 150 VGE, GATE-TO-EMITTER VOLTAGE (V) TC = 25C 15 C, CAPACITANCE (pF) 100 Cies 10 Coes 50 Cres 5.0 VCE = 300 V VGE = 15 V IC = 0.3 A TC = 25C 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 0 5.0 10 15 20 25 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 0 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-To-Emitter Voltage versus Total Charge Eoff , TOTAL SWITCHING ENERGY LOSSES ( m J) Eoff , TOTAL SWITCHING ENERGY LOSSES ( m J) 60 50 40 30 20 25C 10 0 0 0.5 1.0 1.5 2.0 IC, COLLECTOR-TO-EMITTER CURRENT (AMPS) L = 3.0 mH VCC = 300 V VGE = 15 V RG = 25 W dV/dt = 1.0 kV/ms 20 L = 3.0 mH VCC = 300 V VGE = 15 V RG = 25 W dV/dt = 1.0 kV/ms 0.7 A 15 125C 10 0.3 A 5.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9. Total Switching Losses versus Collector-To-Emitter Current Figure 10. Total Switching Losses versus Case Temperature 2.5 ICE, COLLECTOR-EMITTER CURRENT (A) 2.0 1.5 1.0 TC = 125C VGE = 15 V RG = 25 W L = 3.0 mH 0 100 200 300 400 500 600 0.5 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 11. Minimum Turn-Off Safe Operating Area 4 Motorola Power Products Division Technical Data MMG05N60D 1.0 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 t, TIME (ms) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 t2 DUTY CYCLE, D = t1/t2 t1 P(pk) RJC(t) = r(t) RJC RJC = 30C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) Figure 12. Typical Thermal Response 3.8 0.15 2.0 0.079 4.6 0.181 2.3 0.091 2.0 0.079 1.5 0.059 1.5 0.059 1.5 0.059 6.2 0.244 mm inches Motorola Power Products Division Technical Data 5 MMG05N60D PACKAGE DIMENSIONS A F 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S 1 2 3 B D L G J C 0.08 (0003) H M K INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 CASE 318E-04 TO-261A ISSUE H Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 6 MMG05N60D/D Motorola Power Products Division Technical Data |
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